![]() H01L29/02- Semiconductor bodies Multistep manufacturing processes therefor.PN junction depletion layer or carrier concentration layer Details of semiconductor bodies or of electrodes thereof Multistep manufacturing processes therefor H01L29/00- Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g.H01L- SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10.Anticipated expiration legal-status Critical Status Expired - Fee Related legal-status Critical Current Links ![]() F/K/A SEMICOA Assigned to SEMICOA CORPORATION reassignment SEMICOA CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). CONFIRMATORY PATENT ASSIGNMENT Assignors: ARRAY OPTRONIX, INC. Assignors: METZLER, RICHARD A., RODOV, VLADIMIR Application granted granted Critical Publication of US5554880A publication Critical patent/US5554880A/en Priority to US08/818,643 priority patent/US5932922A/en Priority to US09/300,169 priority patent/US6103584A/en Assigned to SEMICOA ACQUISITION CORP. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Application filed by Semicoa Semiconductors filed Critical Semicoa Semiconductors Priority to US08/287,161 priority Critical patent/US5554880A/en Assigned to SEMICOA SEMICONDUCTORS reassignment SEMICOA SEMICONDUCTORS ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). ![]() Original Assignee Semicoa Semiconductors Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Metzler Vladimir Rodov Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Expired - Fee Related Application number US08/287,161 Inventor Richard A. Google Patents Uniform current density and high current gain bipolar transistorÄownload PDF Info Publication number US5554880A US5554880A US08/287,161 US28716194A US5554880A US 5554880 A US5554880 A US 5554880A US 28716194 A US28716194 A US 28716194A US 5554880 A US5554880 A US 5554880A Authority US United States Prior art keywords emitter base current transistor uniform Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US5554880A - Uniform current density and high current gain bipolar transistor US5554880A - Uniform current density and high current gain bipolar transistor
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